POWERQUARK launched high-side switches with BCD vertically integrated process
2025-08-21
POWERQUARK released the second-generation automotive-grade high-side switch (HSD) PQ77450CQ. Based on vertical-channel BCD integration process, the product integrates MOS and controller on a single N-type substrate, offering customers a more convenient system development experience.
Dual-Track Evolution, Leading the Market
POWERQUARK has invested substantial resources in the dual-track process evolution routes of co-packaging and integration, launching a series of high-performance HSD family products.
The vertical-channel BCD integration process is a monolithic wafer-level technology that manufactures bipolar transistors, CMOS, DEMOS, LDMOS, and VDMOS on the same N-type silicon substrate. In contrast, the co-packaging process involves assembling power devices and control ICs into the same package through planar or stacked arrangements at the packaging stage, with electrical connections made through bonding wires, while keeping the chips physically independent.
The integration process, characterized by a common substrate and short interconnections, is particularly suitable for high-side switch products. The co-packaging process, on the other hand, allows the use of the most mature processes for MOSFETs and controllers separately, offering greater flexibility in voltage levels. The following figure illustrates the principles and key feature comparisons of the integration and co-packaging processes.
Process Principle Comparison. Left: Integration Process, Right: Co-Packaging Process
POWERQUARK has been deeply involved in the field of body control for a long time. For intelligent high-side switch products, POWERQUARK has launched more than 30 high-performance products in various packaging forms based on the dual-track process evolution route. We have established a dedicated process team to work closely with wafer fabs, continuously breaking through technological bottlenecks. It has taken the lead in implementing the second-generation integration process for high-side switches, breaking free from the limitations of the traditional foundry model through independent process development, and establishing a competitive edge in the high-end market.
High-Efficiency Drive, Safe Protection
Designed on the vertical BCD integration process platform, PQ77450CQ is a four-channel intelligent high-side switch with an ultra-low on-state resistance of 50mΩ. It supports a wide voltage range of 4V-28V, withstands 40V load dump, and features an ultra-low quiescent current of 0.5μA. The product can achieve high-precision current sensing, with a current sensing accuracy of ±4% at 2A. It is packaged in an eSSOP-14 with a heat sink pad, which is pin-compatible with peers.
PQ77450CQ Pin Diagram
PQ77450CQ integrates comprehensive protection mechanisms and precise diagnostic functions, including overcurrent or short-to-GND protection by current shutdown, thermal shutdown and thermal swing, negative voltage clamp with optimized slew rate, open-load and short-to-battery detection in off-state, loss of GND and loss of battery protection, over-voltage and under-voltage protection. It can multiplex analog signals to provide real-time proportional feedback of the load current for each channel.
PQ77450CQ Typical Application Diagram
PQ77450CQ demonstrates excellent performance under various stringent operating conditions, including driving halogen lamp loads, driving capacitive loads, inductive load shutdown, short circuit after output turn-on, and short circuit followed by reconnection.